A novel method of producing CuInSe/sub 2/ thin films has been developed. This method has promising potential for low-cost, large-area production and could be easily transferred to industrial application. Preliminary results showed that CuInSe/sub 2/ films are homogeneous over the substrate area used ( approximately 50 cm/sup -2/). All the cells produced from the same film demonstrated efficiencies of around 3%. The highest cell efficiency obtained was 3.5%. The corresponding device parameters were V/sub oc/=260 mV, J/sub sc/=25 mA/cm/sup 2/, and FF=45% under ELH illumination, 85 mW/cm/sup 2/. Results from capacitance-voltage and quantum efficiency measurements are also discussed.ETX