Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Capacitors with Low-Voltage Operation and High Reliability for Next-Generation FRAM Applications
- Resource Type
- Conference
- Authors
- Kim, Si Joon; Mohan, Jaidah; Young, Chadwin D.; Colombo, Luigi; Kim, Jiyoung; Summerfelt, Scott R.; San, Tamer
- Source
- 2018 IEEE International Memory Workshop (IMW) Memory Workshop (IMW), 2018 IEEE International. :1-4 May, 2018
- Subject
- Components, Circuits, Devices and Systems
Capacitors
Random access memory
Semiconductor device measurement
Hysteresis
Switches
Voltage measurement
Pulse measurements
- Language
- ISSN
- 2573-7503
In this study, we investigated the ferroelectric properties of Hf0.5Zr0.5O2 (HZO) thin films with different thicknesses (5-20 nm) deposited by atomic layer deposition for the development of future ferroelectric random access memory cells. HZO-based capacitors with a thickness of 5 nm exhibited a switching polarization of ~13 μC/cm2 and a ferroelectric saturation voltage of ~1.0 V as extracted from the pulse write/read measurements. Furthermore, we performed fatigue measurements and we found no degradation up to 1010 switching cycles at 1.2 V.