Nearly White-Light Emission From GaN-Based Light-Emitting Diodes Integrated With a Porous SiO $_{2}$ Layer
- Resource Type
- Periodical
- Authors
- Hsieh, C.-H.; Ke, M.-Y.; Shih, G.-A.; Chiu, T.-Y.; Huang, J. J.
- Source
- IEEE Photonics Technology Letters IEEE Photon. Technol. Lett. Photonics Technology Letters, IEEE. 19(9):662-664 May, 2007
- Subject
- Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Light emitting diodes
Phosphors
Gallium nitride
Voltage
Nanocrystals
Plasma temperature
Radiative recombination
Spontaneous emission
Lighting
Semiconductor diodes
Light-emitting diodes (LEDs)
Si-nanocrystal
%24%5F{2}%24<%2Ftex><%2Fformula>+porous+layer%22">SiO$_{2}$ porous layer
white light
- Language
- ISSN
- 1041-1135
1941-0174
In this letter, we develop a nearly white-light- emitting device by integrating blue/green emission from a GaN-based light-emitting diode with red emission from a porous SiO$_{2}$ layer. The porous SiO$_{2}$ layer was fabricated by a novel process procedure to create Si nanocrystals on top of the n-type GaN layer. Red light is generated from the metal–oxide–semiconductor (Ni–Au–SiO $_{2}$ oxide-n-type GaN) structure due to the electron–hole recombination in the Si nanocrystals. The device shows a blue light emission at a low biased voltage and nearly white-light emission (green and red colors) at a bias voltage between 14 and 16 V. Our results show the potential of applying such an integrated structure to white-light illumination.