High-Throughput Nanogap Formation Using Single Ramp Feedback Control
- Resource Type
- Periodical
- Authors
- Johnson, S. L.; Hunley, D. P.; Sundararajan, A.; Johnson, A. T. C.; Strachan, D. R.
- Source
- IEEE Transactions on Nanotechnology IEEE Trans. Nanotechnology Nanotechnology, IEEE Transactions on. 10(4):806-809 Jul, 2011
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Electromigration
Junctions
Voltage control
Lead
Clamps
Physics
Feedback control
molecular electronics
nanoelectronics
nanogap electrodes
parallel nanogaps
- Language
- ISSN
- 1536-125X
1941-0085
We demonstrate a technique for simultaneously fabricating arrays of electromigrated nanogaps using a single-ramp feedback-controlled voltage clamp. The parallel formation is achieved by controlling the applied bias with a voltage clamp directly adjacent to a nanogap array containing low-impedance shunts. Self-balancing of the electromigration permits the two voltage leads to fix the applied voltage across all the forming nanogaps simultaneously. This single-ramp feedback-controlled voltage clamp method is at least a 100 times faster than previous work utilizing computer feedback control of parallel nanojunctions and also circumvents the deleterious thermal runaway that occurs in the conventional single-ramp technique.