Comparisons on performance improvement by nitride capping layer among different channel directions nMOSFETs
- Resource Type
- Conference
- Authors
- Tzu-I Tsai; Yao-Jen Lee; King-Sheng Chen; Jeff Wang; Fu-Kuo Hsueh; Horng-Chih Lin; Tiao-Yuan Huang
- Source
- 2007 International Semiconductor Device Research Symposium Semiconductor Device Research Symposium, 2007 International. :1-2 Dec, 2007
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
MOSFETs
Silicon compounds
Educational institutions
Uniaxial strain
Electron mobility
Hydrogen
Annealing
Degradation
Laboratories
Nanotechnology
- Language
We propose the electrical characteristics and reliability behaviors of nMOSFETs using SiN capping layer on Hi- or Cz-wafers on different channel directions.