Design Trade-offs between Series-Peaking Inductor and High $f_T$ SiGe HBTs in Transimpedance Amplifiers
- Resource Type
- Conference
- Authors
- Sharma, Prateek Kumar; Ruparelia, Vaibhav; Sirohi, Saurabh; Raghunathan, Uppili S.; Vanukuru, Venkata; Jain, Vibhor
- Source
- 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2023 IEEE. :167-170 Oct, 2023
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
General Topics for Engineers
Photonics and Electrooptics
Power, Energy and Industry Applications
Integrated circuits
Inductance
Semiconductor device measurement
Bandwidth
BiCMOS integrated circuits
Size measurement
Heterojunction bipolar transistors
TIAs
Optical Transceivers
SiGe
High $f_{T}/f_{MAX}$ HBTs
- Language
- ISSN
- 2831-4999
Series-peaking inductor is a crucial block in a shunt-feedback Transimpedance amplifier (TIA) used for bandwidth enhancement. Achieving high-quality factor (Q) and high self-resonant frequency (SRF) of on-chip inductors is challenging for large bandwidth TIAs. A higher $f_T$ heterojunction bipolar transistor (HBT) can relax the requirement of series-peaking inductance. Due to the lower inductance value, a high $Q$ and high SRF can be achieved. This paper presents design trade-offs between the series-peaking inductor and HBT device parameters using two different GlobalFoundries SiGe BiCMOS processes 9HP+ (90nm Bulk) and 45nm SiGe (45nm RFSOI). The simulation and measurement results are shown to validate the trade-offs. Measurements show that 45nm SiGe TIAs have 15-25% more bandwidth than 9HP+ TIAs, with a 14-30% reduction in inductance across various device sizes.