Compact Modelling of 22nm FDSOI CMOS Semiconductor Quantum Dot Cryogenic I-V Characteristics
- Resource Type
- Conference
- Authors
- Tripathi, S. Pati; Bonen, S.; Nastase, C.; Iordanescu, S.; Boldeiu, G.; Pasteanu, M.; Muller, A.; Voinigescu, S. P.
- Source
- ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), ESSDERC 2021 - IEEE 51st European. :43-46 Sep, 2021
- Subject
- Components, Circuits, Devices and Systems
Photonics and Electrooptics
Semiconductor device modeling
Semiconductor device measurement
MOSFET
Temperature distribution
Quantum dots
Qubit
Silicon-on-insulator
compact modelling
Coulomb Blockade
cryogenics
semiconductor quantum dot
silicon germanium
silicon-on-insulator
- Language
A compact analytical model is reported capturing the effects of Coulomb Blockade and charge quantization on the drain current characteristics of a MOSFET-based semiconductor quantum dot at cryogenic temperatures. It is implemented as a Verilog-A add-on to the foundry-provided MOSFET model to facilitate potential integration in any design kit and allow for simulation of quantum processors that integrate qubits and control electronics on the same die. The model was verified in the 6-50 K temperature range on the measured I-V characteristics of a nanoscale p-MOSFET fabricated in production 22nm FDSOI CMOS technology.