A 22.5-dB gain, 20.1-dBm output power K-band power amplifier in 0.18-µm CMOS
- Resource Type
- Conference
- Authors
- Hung, Chi-Cheng; Kuo, Jing-Lin; Lin, Kun-You; Wang, Huei
- Source
- 2010 IEEE Radio Frequency Integrated Circuits Symposium Radio Frequency Integrated Circuits Symposium (RFIC), 2010 IEEE. :557-560 May, 2010
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Power amplifiers
Power generation
K-band
CMOS process
Frequency
Radiofrequency amplifiers
High power amplifiers
Performance gain
Driver circuits
Resistors
power amplifier (PA)
power combining
CMOS
- Language
- ISSN
- 1529-2517
2375-0995
A fully integrated power amplifier (PA) at K-band implemented in 0.18-µm CMOS process is presented. With appropriate prematch of power cells and high gain driver stage network design, the power amplifier performs 22.5 dB peak gain and saturation output power of 20.1 dBm. The 3-dB gain bandwidth is from 18–23 GHz, while the output power at 1-dB compression point (OP 1dB ) from 19–22 GHz is over 15 dBm. To the authors' best knowledge, this is the power amplifier with the highest gain and with good output power in K-band using standard CMOS process.