A 0.18 /spl mu/m 90 GHz f/sub T/ SiGe HBT BiCMOS, ASIC-compatible, copper interconnect technology for RF and microwave applications
- Resource Type
- Conference
- Source
- International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318) Electron devices Electron Devices Meeting, 1999. IEDM '99. Technical Digest. International. :569-572 1999
- Subject
Components, Circuits, Devices and Systems Engineered Materials, Dielectrics and Plasmas Photonics and Electrooptics Silicon germanium Germanium silicon alloys Heterojunction bipolar transistors BiCMOS integrated circuits Copper Character generation Voltage Integrated circuit noise Noise figure Delay - Language