Stress analysis of shallow trench isolation for 256 M DRAM and beyond
- Resource Type
- Conference
- Authors
- Kuroi, T.; Uchida, T.; Horita, K.; Sakai, M.; Inoue, Y.; Nishimura, T.
- Source
- International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) Electron devices - IEDM 1998 Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International. :141-144 1998
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Stress
Oxidation
Ultra large scale integration
Etching
Electronic mail
Temperature
Viscosity
Elasticity
Lapping
- Language
- ISSN
- 0163-1918
The stress generation of the shallow trench isolation has been systematically investigated using the stress simulation and the experiment. It is found that the scale-down of the isolation pitch causes a remarkable stress generation due to the overlap of the stress from both trench sides. Therefore a small isolation pitch causes the crystal defects generation with ease. We carried out the stress analysis against the various process parameters in detail. The high temperature sacrificial oxidation can effectively eliminate the stress generation. It was confirmed that enough isolation characteristics can maintain up to 0.1 /spl mu/m regime to give a careful consideration of the stress reduction.