Analysis of statistical variation in NBTI degradation of HfO2/SiO2 FETs
- Resource Type
- Conference
- Authors
- Yoshimoto, H.; Hisamoto, D.; Shimamoto, Y.; Tsuchiya, R.; Yanagi, I.; Arigane, T.; Torii, K.; Funayama, K.; Hashimoto, T.; Makiyama, H.; Horita, K.; Iwamatsu, T.; Shiga, K.; Mizutani, M.; Inoue, M.; Kaneoka, T.
- Source
- 2010 IEEE International Reliability Physics Symposium Reliability Physics Symposium (IRPS), 2010 IEEE International. :1001-1003 May, 2010
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Power, Energy and Industry Applications
Niobium compounds
Titanium compounds
Degradation
Hafnium oxide
Negative bias temperature instability
Atomic layer deposition
FETs
Hydrogen
High K dielectric materials
High-K gate dielectrics
NBTI
HfO2
variation
R&D mode
hydrogen
- Language
- ISSN
- 1541-7026
1938-1891
The variations in negative bias temperature instability (NBTI) degradation in transistors with HfO 2 /SiO 2 gate dielectric in which thin HfO 2 was deposited on SiO 2 by atomic layer deposition (ALD) were investigated. The median value of NBTI degradation in the FET with HfO 2 /SiO 2 is lower than that with SiON, but the NBTI variation is large and increases as HfO 2 becomes thicker. We propose a model in which the NBTI variation is caused by the variations of the initial hydrogen density in the gate oxide and the small variation of the initial interface trap density. By using this model, the observed large NBTI variation in the high-k device can be well reproduced.