Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm
- Resource Type
- Conference
- Source
- 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2022 IEEE Symposium on. :292-293 Jun, 2022
- Subject
Components, Circuits, Devices and Systems Performance evaluation Atomic measurements Annealing Logic gates Very large scale integration Benchmark testing Ions - Language
- ISSN
- 2158-9682