Single-Event Effects in Power MOSFETs: Physical Mechanism and Hardening through 3D Simulations
- Resource Type
- Conference
- Authors
- Ming, Zhu; Tong, Wang; HanTian, Gu; RuoYuan, Qu; HengJing, Zhu; Wei, Zhang; Min, Tang
- Source
- 2018 IEEE 2nd International Conference on Circuits, System and Simulation (ICCSS) Circuits, System and Simulation (ICCSS), 2018 IEEE 2nd International Conference on. :1-4 Jul, 2018
- Subject
- Components, Circuits, Devices and Systems
Three-dimensional displays
Solid modeling
MOSFET
Numerical models
Layout
Ions
Immune system
single-event effects
power devices
TCAD
- Language
In this paper, we demonstrate the feasibility and necessity of 3D numerical simulation in the quantitative study of burn-out and latch-up effects in VDMOS and LDMOS power transistors. Insight of which lead to a novel LDMOS layout that is immune to SEL proposed in this paper.