Feasibility of new ARC using PECVD for both KrF and ArF lithography
- Resource Type
- Conference
- Authors
- Yongbeom Kim; Junghyeon Lee; Hanku Cho; Jootae Moon
- Source
- Digest of Papers Microprocesses and Nanotechnology 2000. 2000 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.00EX387) Microprocesses and nanotechnology 2000 Microprocesses and Nanotechnology Conference, 2000 International. :106-107 2000
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Lithography
Etching
Reflectivity
Carbon
Hydrogen
Chemical elements
Organic materials
Optical refraction
Extinction coefficients
Substrates
- Language
We developed and confirmed the feasibility of a new carbon ARC (CARC) for both KrF and ArF lithography. CARC has high conformability on topography and is easily removable during the resist stripping process. Also good ARC performance and etch characteristics of CARC with sublayers are obtained. Thus, CARC is a promising alternative to SiON ARC and organic ARC.