High-efficiency GaAs solar cells from a multiwafer OMVPE reactor
- Resource Type
- Conference
- Authors
- Bertness, K.A.; Ristow, M.L.; Hamaker, H.C.
- Source
- Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference Photovoltaic Specialists Conference, 1988., Conference Record of the Twentieth IEEE. :769-770 vol.1 1988
- Subject
- Photonics and Electrooptics
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Gallium arsenide
Photovoltaic cells
Inductors
Costs
Substrates
Doping
Epitaxial growth
Production
Current density
Lighting
- Language
A p/n GaAs solar cell with 24.0% efficiency under 1-sun global illumination (AM1.5, 1000 W/m/sup 2/) has been grown in a multiwafer organometallic vapor-phase epitaxy (OMVPE) reactor. This reactor has demonstrated good uniformity both from run to run and within a single run as part of a pilot line for the batch production of high-efficiency GaAs cells. The 24% efficiency value represents the highest efficiency reported to date for any solar cell under these conditions. The improved performance of these cells is believed to be mostly due to careful control of the emitter doping.ETX