N-type SiGe/Ge superlattice structures for terahertz emission
- Resource Type
- Conference
- Authors
- Halpin, John; Myronov, Maksym; Rhead, Stephen; Leadley, David R.
- Source
- 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Silicon-Germanium Technology and Device Meeting (ISTDM), 2014 7th International. :65-66 Jun, 2014
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Quantum cascade lasers
Silicon
Substrates
Superlattices
Surface morphology
Silicon germanium
- Language
Challenging n-type QCL structures have been grown using RP-CVD with good crystal quality in the active region. These structures represent significant progress towards terahertz emission from a Si/Ge structure. Similar SiGe superlattice structures reported in the literature have suffered from multiple dislocations entering the active region, [9] (grown on a thick buffer) and [10] (grown on a thin buffer). Detailed characterization will be presented along with growth details of our promising structures.