Graphene-Si Schottky IR Detector
- Resource Type
- Periodical
- Authors
- Amirmazlaghani, M.; Raissi, F.; Habibpour, O.; Vukusic, J.; Stake, J.
- Source
- IEEE Journal of Quantum Electronics IEEE J. Quantum Electron. Quantum Electronics, IEEE Journal of. 49(7):589-594 Jul, 2013
- Subject
- Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Graphene
Detectors
Schottky diodes
Silicon
Junctions
Semiconductor lasers
Photonics
Si
Schottky diode
Detector
- Language
- ISSN
- 0018-9197
1558-1713
This paper reports on photodetection properties of the graphene-Si schottky junction by measuring current–voltage characteristics under 1.55-$\mu{\rm m}$ excitation laser. The measurements have been done on a junction fabricated by depositing mechanically exfoliated natural graphite on top of the pre-patterned silicon substrate. The electrical Schottky barrier height is estimated to be (0.44–0.47) eV with a minimum responsivity of 2.8 mA/W corresponding to an internal quantum efficiency of 10%, which is almost an order of magnitude larger than regular Schottky junctions. A possible explanation for the large quantum efficiency related to the 2-D nature of graphene is discussed. Large quantum efficiency, room temperature IR detection, ease of fabrication along with compatibility with Si devices can open a doorway for novel graphene-based photodetectors.