Annealing effects on the structure of Ge-Sb-Te alloys
- Resource Type
- Conference
- Authors
- Cinkaya, Hatun; Hasekioglu, Arif Sirri Atilla; Kaya, Zahit Evren; Kalem, Seref; Charpin-Nicolle, Christelle; Bourgeois, Guillaume; Guillaume, Nicolas; Cyrille, Marie Claire.; Nowak, Etienne; Navarro, Gabriele; Garrione, Julien
- Source
- 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) Ultimate Integration on Silicon (EUROSOI-ULIS), 2020 Joint International EUROSOI Workshop and International Conference on. :1-4 Sep, 2020
- Subject
- Components, Circuits, Devices and Systems
Signal Processing and Analysis
Temperature measurement
Annealing
X-ray scattering
Raman scattering
X-ray diffraction
Germanium
Standards
GST
Ge-rich GST
Thermal Annealing
Phase Change Materials
- Language
- ISSN
- 2472-9132
In the present study the structural properties of Germanium (Ge)-Antimony (Sb)-Tellurium (Te) (GST) and Ge-rich GST thin film samples are investigated after annealing temperatures ranging from room temperature up to 450°C. We performed the annealing procedure using a heat rate of 10 °C/s to achieve the target temperature for a duration of 10 minutes under N2 flow. After heat treatment, we carried out X-Ray Diffraction (XRD), Fourier Infra-Red Spectroscopy (FTIR) and Raman Spectroscopy measurements to investigate the evolution of the structure in the samples. We confirm the delayed crystallization and structure evolution at higher temperatures of Ge-rich samples with respect to standard GST.