A Ku-Band Power Amplifier in 130nm CMOS
- Resource Type
- Conference
- Authors
- Wei, Lingling; Gui, Yongfeng; Pang, Dongwei; Wu, Shiwei; Zhao, Hongliang
- Source
- 2021 IEEE International Workshop on Electromagnetics: Applications and Student Innovation Competition (iWEM) Electromagnetics: Applications and Student Innovation Competition (iWEM), 2021 IEEE International Workshop on. volume1:1-3 Nov, 2021
- Subject
- Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Technological innovation
Broadband amplifiers
Conferences
Power amplifiers
Bandwidth
CMOS process
Gain
- Language
This paper presents a fully integrated 14-19 GHz Ku-band power amplifier fabricated in 130 nm CMOS process. To obtain good performance in a wide bandwidth, magnetically coupled resonator (MCR) based matching networks are used for the broadband PA. The PA achieves 16.25 to 16.75 dBm saturated output power and 12.25 to 13. 81dBm OPldB from 14 to 19 GHz. And the simulated small-signal gain 3-dB bandwidth is 6.1 GHz (13.2 to 19.3 GHz) with a maximum gain of 14.7 dB at 14.2 GHz.