Thermal conductivity of Si/Ge superlattices
- Resource Type
- Conference
- Authors
- Borca-Tasciuc, T.; Weili Liu; Jianlin Liu; Taofang Zeng; Song, D.W.; Moore, C.D.; Gang Chen; Wang, K.L.; Goorsky, M.S.; Radetic, T.; Gronsky, R.; Xiangzhong Sun; Dresselhaus, M.S.
- Source
- Eighteenth International Conference on Thermoelectrics. Proceedings, ICT'99 (Cat. No.99TH8407) Thermoelectrics Thermoelectrics, 1999. Eighteenth International Conference on. :201-204 1999
- Subject
- Computing and Processing
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Signal Processing and Analysis
General Topics for Engineers
Thermal conductivity
Superlattices
Conductivity measurement
Thermoelectricity
Gallium arsenide
Molecular beam epitaxial growth
Materials science and technology
Thermal engineering
Temperature
Conducting materials
- Language
- ISSN
- 1094-2734
We report in this paper the thermal conductivity measurement of Si/Ge superlattices as a function of the temperature and the period thickness. The symmetrized Si/Ge superlattices are grown by MBE on Si substrates with a graded buffer layer. A comparative 3/spl omega/ method is used to measure the thermal conductivity of the buffer and the superlattices between 80K-300K. The thermal conductivity is carried out in conjunction with X-ray and TEM sample characterization. The measured thermal conductivity values are lower than that of their corresponding alloys and show a decreasing trend with increasing period thickness which are corroborated with the TEM characterization of the dislocation density.