Synthesis of buried oxide by plasma implantation with oxygen and water plasma
- Resource Type
- Conference
- Authors
- Liu, J.B.; Iyer, S.S.K.; Min, J.; Chu, P.K.; Gronsky, R.; Hu, C.; Chueng, N.W.
- Source
- 1995 IEEE International SOI Conference Proceedings SOI conference SOI Conference, 1995. Proceedings., 1995 IEEE International. :166-167 1995
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Oxygen
Plasma immersion ion implantation
Implants
Plasma materials processing
Plasma temperature
Annealing
Silicon
Voltage
Nuclear and plasma sciences
Physics
- Language
Separation by plasma implantation of oxygen (SPIMOX) is a novel method for fabricating silicon-on-insulator (SOI) wafers. This method uses plasma immersion ion implantation (PIII) where the desired voltage of implant is applied to a wafer immersed in a plasma. SPIMOX is particularly suited for thin separation by implantation of oxygen (SIMOX) wafer fabrication. High implantation rates can be achieved in SPIMOX. A dose of nearly 10/sup 18/ cm/sup -2/ with an implant current density of 1 mA cm/sup -2/ can be achieved in 3 minutes of implantation time. The short implantation time and the simplicity of the implantation equipment makes it a potentially more economical method for fabricating SIMOX wafers. Moreover, the theoretical time for implantation remains constant in SPIMOX with increase in wafer size.