GaN: A multifunctional material enabling MEMS resonators based on amplified piezoelectric detection
- Resource Type
- Conference
- Authors
- Faucher, Marc; Ben Amar, Achraf; Grimbert, Bertrand; Brandli, Virginie; Werquin, Matthieu; Buchaillot, Lionel; Gaquiere, Christophe; Theron, Didier; Cordier, Yvon; Semond, Fabrice
- Source
- 2011 Joint Conference of the IEEE International Frequency Control and the European Frequency and Time Forum (FCS) Proceedings Frequency Control and the European Frequency and Time Forum (FCS), 2011 Joint Conference of the IEEE International. :1-5 May, 2011
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Signal Processing and Analysis
Robotics and Control Systems
Power, Energy and Industry Applications
Gallium nitride
Optical resonators
MODFETs
Silicon
HEMTs
Aluminum gallium nitride
Logic gates
- Language
- ISSN
- 2327-1914
2327-1949
1075-6787
The properties of a new class of electromechanical resonators based on GaN are presented. By using the flexural modes of a doubly clamped beam, the two-dimensional electron gas (2-DEG) present at the AlGaN/GaN interface can be modulated by a field effect arising from the GaN buffer piezoelectricity. This leads to active piezoelectric transducers for which we show experimental results with detailed bias condition studies up to 10 MHz. Associated with modeling of the transduction physics, this allows explaining how the 2-DEG properties lead to the transconductance effect in the electromechanical domain.