RF distortion analysis with compact MOSFET models
- Resource Type
- Conference
- Authors
- Bendix, P.; Rakers, P.; Wagh, P.; Lemaitre, L.; Grabinski, W.; McAndrew, C.C.; Gu, X.; Gildenblat, G.
- Source
- Proceedings of the IEEE 2004 Custom Integrated Circuits Conference (IEEE Cat. No.04CH37571) Custom integrated circuists Custom Integrated Circuits Conference, 2004. Proceedings of the IEEE 2004. :9-12 2004
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Radio frequency
MOSFET circuits
Circuit simulation
Harmonic distortion
Semiconductor device modeling
Harmonic analysis
Circuit testing
Distortion measurement
Analytical models
Transient analysis
- Language
This paper examines the relation between the structure of a compact MOSFET model and its ability to model harmonic distortion. It is found that non-singular behavior at zero drain bias is essential for qualitatively correct simulations of the third harmonic power dependence. Specifically, nonlinear distortion analysis requires that the Gummel symmetry condition be satisfied by the compact model. A simple procedure to enforce the Gummel symmetry without increasing the complexity of the model is incorporated in an advanced surface-potential-based MOSFET model to enable correct harmonic distortion modeling.