Design and Analysis of Low-Voltage, MOS-only Bandgap Reference Circuit
- Resource Type
- Conference
- Authors
- Sahu, Tej Prakash; Tiwari, Ritesh Kumar; Misra, Prasanna Kumar; Goswami, Manish; Kandpal, Kavindra
- Source
- 2023 IEEE International Symposium on Smart Electronic Systems (iSES) ISES Smart Electronic Systems (iSES), 2023 IEEE International Symposium on. :283-286 Dec, 2023
- Subject
- Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineering Profession
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Robotics and Control Systems
Signal Processing and Analysis
Temperature sensors
Temperature distribution
Low voltage
Sensitivity
Regulators
Power supplies
Photonic band gap
CTAT
PTAT
reference voltage
subthreshold region
temperature coefficient
- Language
- ISSN
- 2832-3602
This paper presents a novel MOS-only voltage reference with a very low-temperature coefficient (TC) and is immune to power supply variation. It uses a power supply of 1.2 V and can even operate on a voltage of more than 800 mV. The circuit is simulated using PTM 65 nm models on Cadence. Proportional to absolute (PTAT) current is generated by biasing MOS in the subthreshold region and generating thermal voltage (VTH). Similarly, complementary to absolute temperature (CTAT) current is generated using the threshold voltage (VT) of NMOS. Both CTAT and PTAT currents are scaled and combined to give temperature-independent reference voltage. As MOS operating in the subthreshold region uses very little current, therefore the proposed circuit consumes less power. A reference voltage of 500 mV is generated with a temperature coefficient of 287 ppm/ °C for the -40 to +120 °C range while ensuring low sensitivity to power supply variation.