Electrical conductivity across InP and GaAs wafer-bonded structures with miscut substrates
- Resource Type
- Conference
- Authors
- Seal, M.; Mc Kay, J.; Liao, M.; Goorsky, M.S.
- Source
- 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC) Photovoltaic Specialist Conference (PVSC), 2015 IEEE 42nd. :1-6 Jun, 2015
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Tunneling
Gallium arsenide
Electric potential
Manufacturing
Resistance
direct wafer bonding
GaAs
InP
miscut substrate
photovoltaic cells
- Language
Low temperature direct bonding of InP and GaAs wafer combinations using an (NH4)2S treatment are investigated for the effect of out of plane misorientation on interface electrical conductivity. The Seager-Pike model is applied to the zero-bias conductance across a range of temperatures, revealing an increase in potential barrier height across all wafer combinations as the degree of surface misorientation is increased above 4°. This demonstrates that out-of-plane misorientation is a crucial parameter for direct-bonded homo and hetero structures where interface resistivity must be minimized, such as multijunction solar cells.