GaSb quantum dots and its microanalysis using X-ray photoelectron spectroscopy (XPS)
- Resource Type
- Conference
- Authors
- Ramelan, Ari Handono; Arifin, Pepen; Goldys, Ewa
- Source
- 2010 International Conference on Nanoscience and Nanotechnology Nanoscience and Nanotechnology (ICONN), 2010 International Conference on. :84-86 Feb, 2010
- Subject
- Components, Circuits, Devices and Systems
Bioengineering
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Quantum dots
Gallium arsenide
Carbon
Substrates
Contamination
Chemicals
- Language
- ISSN
- 2150-3591
2150-3605
Nanostructures have become a topic of increasing interest due to their fundamental properties and possible device applications. One method of fabrication that is receiving much attention lately is the utilization of the coherent Stranski-Krastanov mode which leads to self-assembly of small-scale islands, driven by the lattice mismatch between the quantum dot material and the underlying substrate material [1–5]. W e quantitatively investigate initial stages of growth and evolution of GaSb islands on GaAs substrates grown by metalorganic chemical vapor deposition (MOCVD). We pay particular attention to the transition from 2D to 3D growth and to the transition between isolated island growth and the coalescence of islands in an effort to improve our understanding of this regime. The extent of oxidation and growth derived oxygen contamination for GaSb quantum dots grown by metalorganic chemical vapour deposition (MOCVD) were also investigated by X-ray photoelectron spectroscopy (XPS) using a system with high energy resolution.