Electrodeposited AlSb compound semiconductor for thin film solar cells
- Resource Type
- Conference
- Authors
- Dhakal, Rabin; Kofford, Joshua; Logue, Brian; Ropp, Michael; Galipeau, David; Yan, Xingzhong
- Source
- 2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE. :001699-001701 Jun, 2009
- Subject
- Photonics and Electrooptics
Power, Energy and Industry Applications
Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Semiconductor thin films
Photovoltaic cells
Heterojunctions
Temperature
III-V semiconductor materials
Artificial intelligence
Indium tin oxide
Gold
Electrodes
Glass
- Language
- ISSN
- 0160-8371
AlSb thin films have been electrodeposited on mesoporous TiO 2 on ITO (In 2 O 3 ∶SnO 2 ) coated glass surface. The reduction potential of Aluminum and Antimony from a solution of SbCl 3 in an AlCl 3 /EMIC ionic liquid and SbCl 3 was determined by cyclic voltammetry to be −0.62 V and 0.54 V respectively. The deposition of AlSb compound was accomplished by reversing the reduction pulsed potential cycles. Thin film solar cells with p - n and p - i - n heterojunction was fabricated using n type TiO 2 layer and the AlSb absorber layer. This p - n heterojunction (AlSb/TiO 2 ) solar cell was simulated by AMPS and shows a maximum conversion efficiency of ∼19 %. Also, a p - i - n heterojunction solar cell has been designed by using AlSb layer as an intrinsic absorber. The p - i - n heterojunction (CuSCN/AlSb/TiO 2 ) structure was fabricated by depositing p type CuSCN layer on top of AlSb layer. The simulation results show an efficiency ∼ 14.4% with a thin AlSb absorber layer of ∼500 nm. The characterization of these AlSb based devices is still under investigation.