This work presents the performance comparison of a V-band T/R amplifier module in a SiGe: C 130nm BiCMOS technology, featuring f t /f max of 250/340 GHz, realized using two different back-end of lines, Aluminium and copper based. The T/R amplifier-module can be used for integrated/hybrid phased array systems and consists of two SPDT switches, PA in Tx path and LNA in Rx path. Measurement results show that the amplifier-module realized using the copper back-end has about 1 dB higher gain, 0.5 dB higher output 1dB compression point in Tx mode and 0.4 dB lower noise Figure in Rx mode than the one based on the Aluminium back-end. The T/R amplifier-module occupies 1.1mm 2 area and consumes 160 mW/50 mW in Tx/Rx modes.