A V-Band Vector Modulator Based Phase Shifter in BiCMOS 0.13 µm SiGe Technology
- Resource Type
- Conference
- Authors
- Drenkhahn, Kevin E.; Gadallah, Ahmed; Franzese, Aniello; Wagner, Christoph; Malignaggi, Andrea
- Source
- 2020 15th European Microwave Integrated Circuits Conference (EuMIC) Microwave Integrated Circuits Conference (EuMIC), 2020 15th European. :65-68 Jan, 2021
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Semiconductor device measurement
Power demand
Baluns
Microwave antenna arrays
Voltage control
Gain
Silicon germanium
millimeter wave integrated circuits
BiCMOS integrated circuits
phased arrays
phase shifters
- Language
This paper presents a vector modulator based phase shifter circuit for the 57–66 GHz Band in IHP 0.13 µm SiGe BiCMOS technology. The input balun is avoided and the single to differential conversion is performed using the input transistors of the variable gain amplifier to achieve small area occupation and power consumption for a scalable design. The full phase range of 0-360° can be reached for a gain higher than -3dB. The 1 dB compression point is reached at -12dBm input power. The power consumption is measured at 45mW, while the active area is only about 0.15mm 2 . The vector modulator characteristics are set by two pairs of control voltages which are applied directly through pins. The paper covers design, simulation and measurement of a prototype chip.