14nm High-Performance MTJ with Accelerated STT-Switching and High-Retention Doped Co-Pt Alloy Storage Layer for 1Znm MRAM
- Resource Type
- Conference
- Authors
- Nakayama, Masahiko; Oikawa, Soichi; Kamata, Chikayoshi; Toko, Masaru; Itai, Shogo; Takashima, Rina; Sugiyama, Hideyuki; Fukuda, Kenji; Koike, Takeo; Saitoh, Masumi; Ito, Junichi; Koi, Katsuhiko
- Source
- 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
- Subject
- Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Nuclear Engineering
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Integrated circuits
Magnetization
Metals
Switches
Writing
Micromagnetics
Magnetic tunneling
- Language
- ISSN
- 2156-017X
We demonstrate a novel 14nm magnetic tunnel junction (MTJ) for achieving high-retention and high-speed writing simultaneously in 1Z (15-14) nm Spin-Transfer-Torque (STT) MRAM. We developed a new Accelerated STT-switching and High-Retention MTJ (AccelHR-MTJ) using storage layer (SL) composed of high-retention doped Co-Pt alloy layer on CoFeB switching accelerating layer. Excellent performances such as high-retention of >10 years at 90°C and high-speed writing down to 5ns were demonstrated in our 14nm AccelHR-MTJ based on the design concept established by micromagnetic simulations. This MTJ technology enables high-density, high-speed, and low-cost 1Znm STT-MRAM toward storage class memory (SCM) applications.