Improved Air Spacer Co-Integrated with Self-Aligned Contact (SAC) and Contact over Active Gate (COAG) for Highly Scaled CMOS Technology
- Resource Type
- Conference
- Authors
- Cheng, Kangguo; Park, Chanro; Wu, Heng; Li, Juntao; Nguyen, Son; Zhang, Jingyun; Wang, Miaomiao; Mehta, Sanjay; Liu, Zuoguang; Conti, Richard; Loubet, Nicolas; Frougier, Julien; Greene, Andrew; Yamashita, Tenko; Haran, Bala; Divakaruni, Rama
- Source
- 2020 IEEE Symposium on VLSI Technology VLSI Technology, 2020 IEEE Symposium on. :1-2 Jun, 2020
- Subject
- Components, Circuits, Devices and Systems
Logic gates
Solids
Transistors
Silicon compounds
FinFETs
Capacitance
Very large scale integration
- Language
- ISSN
- 2158-9682
We report an improved air spacer that is successfully co-integrated on FinFET transistors with Self-Aligned Contacts (SAC) and Contacts Over Active Gate (COAG). The new integration scheme enables air spacer formation agnostic to the underlying transistor architecture, thus paving the way for a seamless adoption of air spacer in FinFET and Gate-All-Around (GAA) technologies. A reduction in effective capacitance (Ceff) by 15% is experimentally demonstrated. The power/performance benefits achieved by the new air spacer exceeds the benefits of scaling FinFET from 7nm node to 5nm node.