Thermal Assisted Switching Magnetic Tunnel Junctions as FPGA memory elements
- Resource Type
- Conference
- Authors
- Silva, Victor; Fernandes, Jorge R.; Oliveira, Luis B.; Neto, Horacio C.; Ferreira, Ricardo; Freitas, Susana; Freitas, Paulo P.
- Source
- 2009 MIXDES-16th International Conference Mixed Design of Integrated Circuits & Systems Mixed Design of Integrated Circuits & Systems, 2009. MIXDES '09. MIXDES-16th International Conference. :332-336 Jun, 2009
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Magnetic switching
Magnetic tunneling
Field programmable gate arrays
Magnetic separation
Random access memory
Writing
Read-write memory
Logic
Temperature
Antiferromagnetic materials
Thermal Assisted Switching Magnetic RAM
Magnetic Tunnel Junctions
Thermally Assisted Switching
Unbalanced Flip Flop
memory element
FPGA
- Language
This paper reports the on-going progress in developing a Thermal Assisted Switching Magnetic RAM (TAS-MRAM) based memory element as an alternative to both SRAM based memory elements and flash based memory elements in the context of Field Programmable Gate Arrays (FPGA).