Long term transients in MOSFET 1/f noise under switched bias conditions
- Resource Type
- Conference
- Authors
- Louie, M.Y.; Forbes, L.
- Source
- 2005 IEEE Workshop on Microelectronics and Electron Devices, 2005. WMED '05. Microelectronics and Electron Devices, 2005. WMED '05. 2005 IEEE Workshop on. :99-102 2005
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
MOSFET circuits
Phase noise
Circuit noise
Low-frequency noise
Threshold voltage
Circuit simulation
Radio frequency
Switching circuits
Phase modulation
Computer science
- Language
- ISSN
- 1947-3834
1947-3842
Klumperink et al., have recently had a number of publications on the low frequency noise of MOSFET's under switched gate bias conditions. Since this is an important consideration in the low frequency noise in analog circuits with switching we have previously investigated the signal processing techniques used in the frequency domain. Here we investigate the time dependence of switched bias 1/f noise