A Novel Ultralow Voltage Slope Device
- Resource Type
- Conference
- Authors
- Li, Pengtao; Wang, Zijian; Xing, Shengpeng; Wang, Zhen; Fan, Xuemeng; Zhang, Yishu
- Source
- 2024 Conference of Science and Technology for Integrated Circuits (CSTIC) Science and Technology for Integrated Circuits (CSTIC), 2024 Conference of. :1-3 Mar, 2024
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Photonics and Electrooptics
Integrated circuits
Neuromorphic engineering
Memory management
Switches
Threshold voltage
Transistors
Switching circuits
- Language
Novel device architectures based on oxide materials have overcome the fundamental thermionic limit of the switching slope (60 mV/ dec). However, a versatile switching device required for highly integrated memory and neuromorphic applications has not been achieved with such exceptional switching slope characteristics. Here, we demonstrate a record-low switching voltage slope down to 0.221 mV/dec in a threshold switching device based on the novel du-al-layer oxide stacked structure, and the threshold voltage of the device can be as low as 0.177V.