Characteristics of GaInAsP/SOI Hybrid Semiconductor Optical Amplifier with InP-based Two-storied Ridge Structure
- Resource Type
- Conference
- Authors
- Makihara, Yutaka; Nishiyama, Nobuhiko; Kikuchi, Takehiko; Hiratani, Takuo; Fujiwara, Naoki; Inoue, Naoko; Nitta, Toshiyuki; Eissa, Moataz; Mitarai, Takuya; Wang, Yuning; Oiso, Yoshitaka; Amemiya, Tomohiro; Yagi, Hideki
- Source
- 2022 27th OptoElectronics and Communications Conference (OECC) and 2022 International Conference on Photonics in Switching and Computing (PSC) OptoElectronics and Communications Conference (OECC) and 2022 International Conference on Photonics in Switching and Computing (PSC), 2022 27th. :01-03 Jul, 2022
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Signal Processing and Analysis
Semiconductor optical amplifiers
Temperature
Surface waves
Optical switches
Bonding
Gain
Photonics
SOA
heterogeneous integration
III-V/Si direct bonding
- Language
GaInAsP/SOI hybrid SOAs with the InP-based two-storied ridge structure fabricated by the room temperature surface activated bonding were demonstrated. The wavelength dependence of gain was within 4.0 dB for the wavelength range from 1540 to 1590 nm.