Theoretical investigation of in situ k-restore processes for damaged ultra-low-k materials
- Resource Type
- Conference
- Authors
- Forster, Anja; Wagner, Christian; Schuster, Jorg; Gemming, Sibylle
- Source
- 2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM) Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM), 2015 IEEE International. :29-32 May, 2015
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Maintenance engineering
Curing
Discrete Fourier transforms
Plasmas
- Language
- ISSN
- 2380-632X
2380-6338
Ultra-low-k (ULK) materials are essential for today's production of integrated circuits (ICs). However, during the manufacturing process the ULK's low dielectric constant (k-value) increases due to the replacement of hydrophobic species with hydrophilic groups. We investigate the use of plasma enhanced fragmented silylation precursors to repair this damage. For this task the fragmentation of the silylation precursors OMCTS and DMADMS and their possible repair reactions are studied using density functional theory (DFT) and molecular dynamics (MD) simulations.