Implications of laser-doping parameters and contact opening size on contact resistivity
- Resource Type
- Conference
- Authors
- Huyeng, Jonas D.; Ernst, Marco; Fong, Kean Chern; Walter, Daniel; Blakers, Andrew
- Source
- 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) Photovoltaic Energy Conversion (WCPEC), 2018 IEEE 7th World Conference on. :1008-1012 Jun, 2018
- Subject
- Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Conductivity
Doping
Resistance
Electrical resistance measurement
Surface emitting lasers
Measurement by laser beam
Laser ablation
Contact opening
contact resistivity
laser ablation
laser doping
metallization
silicon
- Language
Advanced silicon solar cells implement complex structures on both front and rear side. Laser processing has been shown to be a versatile and cost-effective technology for such applications. Local silicon doping or contact opening via ablation are two established process steps. In this work, we investigate their influence on the quality of local contacts with a focus on contact resistivity. We determine values for ρ C down to 70 μΩ cm 2 and 30 μΩ cm 2 for phosphorus and boron respectively, on a simple test structure with the help of three-dimensional numerical simulations.