The study of p-type material based on Sn-rich Mg2Si-Mg2Sn solid solution
- Resource Type
- Conference
- Authors
- Isachenko, G.N.; Zaitsev, V.K.; Fedorov, M. I.; Gurieva, E.A.; Eremin, I.S.; Konstantinov, P.P.; Vedernikov, M.V.
- Source
- 2007 26th International Conference on Thermoelectrics Thermoelectrics, 2007. ICT 2007. 26th International Conference on. :248-250 Jun, 2007
- Subject
- Computing and Processing
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Signal Processing and Analysis
General Topics for Engineers
Solids
Temperature dependence
Effective mass
Electric variables measurement
Temperature distribution
Conductivity measurement
Electron mobility
Conducting materials
Thermal conductivity
Charge carrier processes
- Language
- ISSN
- 1094-2734
In this paper the results of the study of transport properties of some Mg 2 Si x Sn 1−x solid solutions are presented. The samples of various composition (Mg 2 Si x Sn 1−x , x=0.25−0.4) and of wide range of hole concentration (up to 5 10 20 cm −3 ) have been prepared. Temperature dependences of Seebeck and Hall coefficients and electrical conductivity have been measured in the range from 80 up to 800K. The parameters of band structure and conduction mechanism (energy gap, hole mobility and effective mass and the ratio of electron mobility to that of holes) were determined from these measurements. The features of band structure and conduction mechanism are discussed.