Modern 2-D carbon materials are being increasingly studied as potential magnetic field sensors for use in environments with harmful radiation, such as neutron radiation present in future fusion reactors. Potential radiation resistance is also demonstrated by classical semiconductor thin-film materials, after appropriate doping. A necessary condition for the potential neutron-resistant sensor is high-temperature stability. In this letter, we bring together two leading high-temperature sensing platforms: graphene-based and Sn-doped InSb-based. Our study focuses on their thermal stability under identical high-temperature and time conditions. We utilized long-term annealing procedures combined with the simultaneous measurement of the Hall effect to reflect both, the temperature conditions during radiation tests of these platforms performed recently in the MARIA research nuclear reactor, as well as postradiation temperature treatment. We showed that long-term annealing at fixed temperature can affect the graphene-based platform to a greater extent; however, variable temperature tests showed better stability of this system. The InSb-based platform, on the other hand, exhibits much better temperature stability when operating up to 200 °C.