Current dependent performance test used on different types of silicon field emitter arrays
- Resource Type
- Conference
- Authors
- Schels, A.; Edler, S.; Hansch, W.; Bachmann, M.; Herdl, F.; Dusberg, F.; Eder, M.; Meyer, M.; Dudek, M.; Pahlke, A.; Schreiner, R.
- Source
- 2021 34th International Vacuum Nanoelectronics Conference (IVNC) Vacuum Nanoelectronics Conference (IVNC), 2021 34th International. :1-2 Jul, 2021
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Geometry
Fabrication
Field emitter arrays
Current measurement
Blades
Doping
Conductivity
- Language
- ISSN
- 2380-6311
A current dependent performance test is used to investigate the influence of doping and emitter geometry on the lifetime of silicon field emitter arrays. The measurements reveal an improved performance for lower n-type dopant concentrations. Furthermore, two new types of field emitters are introduced by slightly varying the original fabrication process [1]. The comparison shows superiority of tip like emitters over blade like structures.