Empirical modeling of GaN FETs for nonlinear microwave circuit applications
- Resource Type
- Conference
- Authors
- Santarelli, Alberto; Di Giacomo, Valeria
- Source
- 2010 IEEE MTT-S International Microwave Symposium Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International. :1198-1201 May, 2010
- Subject
- Fields, Waves and Electromagnetics
Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Gallium nitride
FETs
Microwave circuits
Thermal resistance
HEMTs
Temperature
Pulse measurements
Power generation
Satellite broadcasting
Predictive models
Semiconductor device modeling
Nonlinear circuits
Nonlinear distortion
- Language
- ISSN
- 0149-645X
A new approach for the electro-thermal modeling of GaN FETs is presented. The model is identified on-wafer through static I/V curves measured at different base plate temperatures and small-signal parameters. Improvements in the prediction of the dc drain current component under large-signal operation can be obtained by taking into account nonlinear dynamics of charge trapping phenomena. The use of measured pulsed-I/V characteristics is avoided in the model extraction phase. Identification procedures and a wide experimental validation for a 0.25 µm AlGaN/GaN HEMT on SiC with 600 µm periphery are provided in the paper.