Large-signal characterization of GaN-based transistors for accurate nonlinear modelling of dispersive effects
- Resource Type
- Conference
- Authors
- Santarelli, Alberto; Cignani, Rafael; Di Giacomo, Valeria; D'Angelo, Sara; Niessen, Daniel; Filicori, Fabio
- Source
- 2010 Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits Integrated Nonlinear Microwave and Millimeter-Wave Circuits (INMMIC), 2010 Workshop on. :115-118 Apr, 2010
- Subject
- Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Fields, Waves and Electromagnetics
Dispersion
Voltage control
FETs
Electron traps
Gallium nitride
Electron devices
Current measurement
Predictive models
III-V semiconductor materials
Frequency
Electron Device Model
GaN-based Device
Low-Frequency Dispersion
Measurement Setup
- Language
A large-signal measurement setup with sinusoidal excitation is used for the characterization of low-frequency dispersive phenomena in III–V FET devices. This low-cost setup operates in the MHz frequency range and its components are easily available in most research laboratories. A dispersive model of the dynamic drain current, taking into account the non linear behaviour of charge trapping phenomena, is identified for an AlGaN/GaN HEMT on the basis of the proposed characterization setup.