Characterization through cathodoluminescence and thermoluminescence of α-SiO2 single crystals before and after γ-radiation treatments : contribution to the evaluation of the influence of defects on the frequency-shifts
- Resource Type
- Conference
- Authors
- Guibert, P.; Chapoulie, R.; Dubernet, S.; Largeteau, A.; Demazeau, G.
- Source
- 2007 IEEE International Frequency Control Symposium Joint with the 21st European Frequency and Time Forum Frequency Control Symposium, 2007 Joint with the 21st European Frequency and Time Forum. IEEE International. :164-167 May, 2007
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Signal Processing and Analysis
Robotics and Control Systems
Power, Energy and Industry Applications
Impurities
Crystals
Frequency
Optical resonators
Luminescence
Crystalline materials
Optical materials
Excitons
Heating
Chemicals
- Language
- ISSN
- 2327-1914
2327-1949
The fiability and performances of quartz resonators are -in particular-dependent on point defects including chemical impurities either in substitution for the Si sites or in interstitial positions in the α-SiO 2 lattice. Such a research work is devoted to cathodoluminescence (CL) and thermoluminescence (TL) studies, before and after γ-radiation treatments, on different single crystals of α-SiO 2 [one being natural and four from hydrothermal processes]. Cathodoluminescence and thermoluminescence were selected as characterization techniques due to their complementarities concerning in particular their abilities to the detection of point defects (mainly impurities and ion vacancies) by their luminescence emission.