High performance, high yield millimeter-wave MMIC LNAs using InP HEMTs
- Resource Type
- Conference
- Authors
- Long Tran; Isobe, R.; Delaney, M.; Rhodes, R.; Jang, D.; Brown, J.; Loi Nguyen; Minh Le; Thompson, M.; Takyiu Liu
- Source
- 1996 IEEE MTT-S International Microwave Symposium Digest Microwave symposium Microwave Symposium Digest, 1996., IEEE MTT-S International. 1:9-12 vol.1 1996
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Aerospace
Communication, Networking and Broadcast Technologies
Photonics and Electrooptics
MMICs
Indium phosphide
HEMTs
MODFETs
Noise figure
Gain
Circuit testing
Millimeter wave communication
Millimeter wave technology
Space technology
- Language
- ISSN
- 0149-645X
A millimeter-wave MMIC low noise amplifier chip set has been developed. Based on the InP HEMT technology, these LNAs provide state-of-the-art performance as well as excellent yield and repeatability. With greater than 50% chip yield, a three-stage Q-band LNA design achieved 26 to 31 dB of gain from 42 to 50 GHz and 1.8 dB average noise figure from 43.3 to 45.7 GHz. In addition, there are six other LNA designs including a four-stage V-band LNA with 28 dB of gain and 2.3 dB noise figure and a two-stage balanced Q-band LNA that provided 17 dB of gain and has greater than 61% yield.