Current-Controlled Negative Resistance in High-Voltage 4H-SiC p-i-n Rectifiers
- Resource Type
- Periodical
- Authors
- Chowdhury, S.; Hitchcock, C.W.; Dahal, R.P.; Bhat, I.B.; Chow, T.P.
- Source
- IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 64(3):897-900 Mar, 2017
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
P-i-n diodes
Anodes
Current density
Temperature measurement
Ion implantation
Frequency selective surfaces
Temperature
Current-controlled negative resistance (CCNR)
ion implantation
p-i-n rectifiers
silicon carbide
- Language
- ISSN
- 0018-9383
1557-9646
This paper presents current-controlled negative resistance (CCNR) phenomena observed in ultrahigh voltage (BV $\geq $ 10 kV) 4H silicon carbide implanted anode p-i-n rectifiers. CCNR under forward bias is believed to be caused by the presence of a thin layer under the anode with a low carrier lifetime, preventing efficient hole injection and leading to poor conductivity modulation of the drift layer.