100 MHz, 85% efficient integrated AlGaAs/GaAs supply modulator for RF power amplifier modules
- Resource Type
- Conference
- Authors
- Peng, Han; Pala, Vipindas; Chow, T.P.; Hella, Mona M.
- Source
- 2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC) Applied Power Electronics Conference and Exposition (APEC), 2013 Twenty-Eighth Annual IEEE. :672-678 Mar, 2013
- Subject
- Power, Energy and Industry Applications
Components, Circuits, Devices and Systems
Communication, Networking and Broadcast Technologies
Computing and Processing
Logic gates
Gallium arsenide
Switches
Inductors
Modulation
Transistors
RLC circuits
- Language
- ISSN
- 1048-2334
A 100 MHz DC-DC converter for RF power amplifier modules employing polar modulation is presented. A resonant low side gate driver and phase shedding/segmentation in the output stage are used for light load efficiency improvement. The proposed two-phases four-segments flip chip DC-DC converter is implemented in 0.5 µm AlGaAs/GaAs p-HEMT technology and occupies 2.5×2 mm 2 for the two segments. An efficiency improvement of 5% is achieved at 4.5 V to 1 V conversion using the resonant low side gate driver. The peak efficiency at 4.5 V/3.3 V and 2 A output current is 85% with the peak value maintained as the load current changes from 0.2 A to 2.8 A under phase shedding/segmentation.