4 kV, 10 A Bipolar Junction Transistors in 4H-SiC
- Resource Type
- Conference
- Authors
- Krishnaswami, S.; Agarwal, A.; Richmond, J.; Chow, T.P.; Geil, B.; Jones, K.; Scozzie, C.
- Source
- 2006 IEEE International Symposium on Power Semiconductor Devices and IC's Power Semiconductor Devices and IC's, 2006. ISPSD 2006. IEEE International Symposium on. :1-4 2006
- Subject
- Power, Energy and Industry Applications
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Silicon carbide
Degradation
Stacking
Temperature measurement
Charge carrier lifetime
Passivation
Laboratories
Powders
Milling machines
Process design
- Language
- ISSN
- 1063-6854
1946-0201
4 kV, 10 A Bipolar Junction Transistors have been demonstrated in 4H-SiC. The device conducts 10 A of collector current with a current gain of 34 at room temperature. The current gain reduces to 21 at 300°C. Under reverse bias, the device is capable of blocking 4.7 kV with 50 μA leakage current. Room temperature switching measurements show a turn-on time of 168 ns and a turn-off time of 106 ns. These devices show some current gain instability, with the gain decreasing by 50% with time under forward stress. Initial observations reveal the presence of stacking faults in the base-emitter region when the device is forward biased.