A 16Kb Antifuse One-Time-Programmable Memory in 5nm High-K Metal-Gate Fin-FET CMOS Featuring Bootstrap High Voltage Scheme, Read Endpoint Detection and Pseudo-Differential Sensing
- Resource Type
- Conference
- Authors
- Chou, Shaun; Li, Gu-Huan; Chen, Shawn; Chang, Jun-Hao; Cheng, Wan-Hsueh; Wu, Shao-Ding; Fan, Philex; Huang, Chia-En; Chih, Yu-Der; Wang, Yih; Chang, Jonathan
- Source
- 2021 Symposium on VLSI Circuits VLSI Circuits, 2021 Symposium on. :1-2 Jun, 2021
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Power, Energy and Industry Applications
Signal Processing and Analysis
Bit error rate
High-voltage techniques
Very large scale integration
Programming
FinFETs
Sensors
High-k dielectric materials
- Language
- ISSN
- 2158-5636
A 16Kb one-time-programmable (OTP) antifuse memory is fabricated in a 5nm high-K, metal-gate FinFET CMOS for the first time. The bootstrap high voltage scheme (BHVS), read endpoint detection (REPD) and pseudo-differential sensing (PDS) are implemented to achieve intrinsic bit error rate (BER) below 1ppb for in-field programming in 5nm SoC and 10 years of data retention at 125°C.