A D-Band Swing Boosting Power Detector With 25-KV/W Intrinsic Responsivity and 2.1-pW/Hz⁰.⁵ NEP in 22-nm CMOS FDSOI
- Resource Type
- Periodical
- Authors
- Lin, B.; Choi, K.; Wang, H.
- Source
- IEEE Microwave and Wireless Technology Letters IEEE Microw. Wireless Tech. Lett. Microwave and Wireless Technology Letters, IEEE. 34(5):497-500 May, 2024
- Subject
- Fields, Waves and Electromagnetics
Frequency measurement
Wireless communication
Transistors
Terahertz communications
Detectors
Power measurement
Logic gates
D-band
MOSFET power detector (PD)
receiver
wireless sensing
- Language
- ISSN
- 2771-957X
2771-9588
A ${D}$ -band swing-boosting CMOS power detector (PD) is proposed and implemented in 22-nm CMOS FDSOI technology. Using transistor parasitics and an added source inductor, the proposed design can achieve 6.5 times swing boosting compared to the traditional PD designs. The measured responsivity and noise equivalent power (NEP) is 25 KV/W and 2.1 pW/Hz0.5, respectively. Compared to the state of the art, the proposed PD provides the highest responsivity for CMOS PD at the ${D}$ -band.