A 14-nm Low Voltage SRAM with Charge-Recycling and Charge Self-Saving Techniques for Low-Power Applications
- Resource Type
- Conference
- Authors
- Cho, Keonhee; Kim, Giseok; Oh, Jisang; Kim, Kiryong; Sim, Changsu; Bae, Younmee; Kim, Mijung; Baeck, Sangyeop; Song, Taejoong; Jung, Seong-Ook
- Source
- 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2022 IEEE Symposium on. :214-215 Jun, 2022
- Subject
- Components, Circuits, Devices and Systems
Low voltage
Very large scale integration
SRAM cells
FinFETs
- Language
- ISSN
- 2158-9682
This paper presents charge-recycling and charge self-saving techniques in SRAM that lower V MIN while consuming minimal read and write energies. The proposed techniques (with flying CV SS ) achieve 250mV (270mV) V MIN improvements in 64-Kb SRAM using 0.080μm 2 LV SRAM cell on 14-nm FinFET technology.